Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits

This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in design by hand. The four-parameter (4PM) is based on the advanced (ACM) and was implemented Verilog-A simulate different designed with ACM Verilog-compatible simulators. Being able MOS through same used hand benefits designers understanding how main affect design. Herein, classic CMOS inverter, ring oscillator, self-biased current source common amplifier were simulated using either 4PM or BSIM model. many sorts of very satisfactory results low-voltage cases. As ultra-low-voltage (ULV) domain expanding due applications, such as internet things wearable circuits, so use simplified ULV